PostHeaderIcon Неймаш В.Б. - резюме

Vlad Neimash

46 Nauky Prospect, Kyiv, 03028, Ukraine

Phone: +38 044 525-3973

fax: +38 044 525-1589

e-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

Position:

Senior staff scientist, group leader.

Department of Physics of Radiation Processes

Institute of Physics of National Academy of Sciences of Ukraine (NASU),

Kyiv, Ukraine.

 

Academic status

2007:

Doctor of physico-mathematical sciences. Institute of Physics, Kyiv, Ukraine. Thesis’s title: “Processes of oxygen impurity state transformation in silicon single crystals under high energy irradiation and heat treatments”.

2003:

Senior Research Fellow, diploma of Senior Researcher.

1988:

PhD, Institute of Physics, Kyiv, Ukraine. Thesis’s title “Heat treatment effects on radiation defects creation and degradation of silicon electro-phisical parameters under irradiation”.

 

Education

1983-1987:

Postgraduate student, Institute of Physics, National Academy of Sciences, Kyiv, Ukraine; Ph.D. diploma.

1973-1981:

Department of Physics, Taras Shevchenko National University, Kyiv, Ukraine; Diploma in Optics and Spectroscopy

 

Employment

1989 – Present:

Senior staff scientist, Institute of Physics of NASU, Kyiv, Ukraine.

1986 - 1989:

Research staff scientist, Institute of Physics of NASU, Kyiv, Ukraine.

1983 - 1986:

Junior staff scientist, Institute of Physics of NASU, Kyiv, Ukraine.

1981 – 1983:

Senior engineer, Institute of Physics of NASU, Kyiv, Ukraine.

1978 – 1981:

engineer, Institute of Physics of NASU, Kyiv, Ukraine.

1976 – 1978:

laboratory assistant, Department of Physics, Kyiv National University, Kyiv, Ukraine.

 

Work experience

Experimental physics of high energy radiation and solid interaction:

I. Radiation defects (RD) creation in silicon single crystals:

  • influence of the thermal pre-history of crystal;
  • influence of the doping by impurities: O; Gd; Yb; C; Sn; Pb;
  • influence of the irradiation intensity and crystal temperature.
  • intrinsic gettering of RD and impurities atoms in Si;
  • role of deformation interaction in secondary RD formation;
  • mechanisms of RD effect on electrical, magnetic and optical properties of silicon and on parameters of the silicon devices.
  • improvement methods of the radiation harness of silicon electronic devices

II. Hard radiation effects on the properties of amorphous and nano-crystal alloys on base system Fe-Si-B:

  • influence on the dynamical magnetic properties;
  • influence on the structure of short range ordering;
  • influence on the Curie temperature;
  • influence on the crystallization of amorphous alloys;
  • mechanisms of the radiation harness of magnetic parameters.

Experimental physics of thermal and radiation induced phenomena in solid:

1.Disintegration of “deep” impurities solid solution in Si crystals at 300-800oC.

2. SiO2-clasters formation in Si at 800 – 1050oC:

  • influence of neutrons irradiation on the SiO2-clasters formation;
  • influence of SiO2-clasters formation on the intrinsic elastic fields in Si crystals.

3. Oxygen related donor (OTD) states in Si induced at 450; 530 and 650 oC:

  • influence of Gd, C, Sn, Pb impurities on the OTD generation kinetics;
  • influence of electron-, gamma- and neutron irradiation on OTD formation;
  • collective optical and magnetic properties of OTD in Si;
  • interconnection of OTD and RD.

4. Improvement methods of thermal stability Si and silicon electronic devices.

5. Crystallization of amorphous alloys on base system Fe-Si-B:

  • influence of impurity doping and composition on crystallite sites;
  • influence of temperature on crystallization kinetics;
  • influence of heat treatments on the magnetic properties.

6. RD accumulation and transformation at high temperature electron irradiation.

 

Main publication

  1. В.Б.Неймаш, М.Г.Соснин, Б.М.Туровский, В.И.Шаховцов, В.Л.Шиндич. Дефектообразование при электронном облучении р-кремния с примесью олова. ФТП, 1982, -16, -5, 901-903.
  2. В.Б.Неймаш, М.Г.Соснин, В.И.Шаховцов, В.Л.Шиндич, И.И.Ясковец. Рекомбинация в n-кремнии при термообработке и облучении, ФТП, 1988, -22, -2, 206-209.
  3. В.Б.Неймаш, Т.Р.Саган, В.М.Цмоць,, В.И.Шаховцов, В.Л.Шиндич. О некоторых механизмах влияния предварительной термообработки на поведение параметров кремния под облучением. ФТП, 1991, т.25 №11, с.1857-1863.
  4. В.Б.Неймаш, Т.Р.Саган, В.М.Цмоць,, В.И.Шаховцов, В.Л.Шиндич, В.С.Штым. Магнитное упорядочение кислородосодержащих термодоноров в Si. УФЖ. 1992, т.37, №3, с.437-441.
  5. Kabaldin A.N. , Neimash V.B., Yu.V. Pomosov, V.I. Shakhovtsov. Tsmots V.Ì., The influence of neutron irradiation on the generation of thermodonors and precipitation of oxygen in silicon at 650 0C. Sov. Phys. Semicond. 1993, v.27, no.11, p.1654-1658.
  6. A.Н.Кабалдин, В.Б.Неймаш, В.М.Цмоць, Л.И.Шпинар. Механизмы влияния термодоноров на холловскую подвижность в кремнии. УФЖ. 1995, т.40, №.10, с.1079-1082.
  7. Neimash V.B., Puzenko O.O., Kabaldin O.M., Kraichinskii A.M., Kras’ko M.M., Claeys C., Simoen E. The nature of precursors for the thermal donor formation in silicon // Solid State Phenomena.- 1999.- V.69-70.- P.351-356.
  8. V.B. Neimash, A. Kraitchinskii, M. Kras'ko, O. Puzenko, C. Claeys, E.Simoen, B. Svensson and A. Kuznetsov. Influence of tin impurities on the generation and annealing of thermal oxygen donors in czochralski silicon at 450 0C // J. Electrochem. Soc.- 2000.-V.147, № 7.- P.2727-2733.
  9. V.Neimash, M.Kras’ko, A.Kraitchinskii, V.Voytovych, V.Tishchenko, E.Simoen, J.M.Rafi, C.Claeys, J.Versluys, O. De Gryse, P.Clauws. DLTS studies of High-Temperature Electron Irradiated Cz n-Si // Phys.St.Sol.(a).-2004.- V.201, N 3.- p.509-516.
  10. V.Yu.Povarchuk, V.B.Neimash, A.M.Kraitchinskii, V.V.Maslov, V.K.Nosenko, G.M.Zelins’ka. Effect of Ionizing Radiation on Magnetic Properties and Structure of Fe(80)Si(6)B(14) Amorphous Alloy // Ukr.J.Phys. 49, N1. P.90-93 (2004).
  11. M. L. David, E. Simoen, C. Claeys, V. Neimash, M. Kras'ko, A. Kraitchinskii, V. Voytovych, A. Kabaldin and J. F. Barbot. Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities // J. Phys.: Condens. Matter.- 2005.- Volume 17, Number 22.- p. S2255-S2266.
  12. Колосюк А.Г., Крайчинський А.М., Красько М.М., Неймаш В.Б., Рогуцький І.С. Температурна залежність ефективності генерації вакансій в n-Si при опроміненні електронами з енергією 1 МеВ // УФЖ.– 2007.– Т.52, №9.– С.869–872.
  13. В. Ю. Поварчук, В.Б. Неймаш, А. М. Крайчинський, В.К. Носенко, В.В. Маслов, Г.М. Зелінська. Вплив електронного і гамма-опромінення на структуру аморфних сплавів Fe-Si-B. // УФЖ – 2008 – Т.53 – №10 – С. 972 – 979.
  14. М.М. Красько, А.М. Крайчинський, А.Г. Колосюк, В.Б. Неймаш, В.А. Макара, Р.В. Петруня, В.Ю. Поварчук, В.В. Войтович. Вплив інтенсивності електронного опромінення на утворення і відпал VO-центрів у кремнії при високих температурах // УФЖ.- 2010.- Т.55, № 7.- С.793–800.
  15. Anatolii Kraitchinskii, Andrii Kolosiuk, Mykola Kras’ko, Volodymyr Neimash, Vasul Voitovych, Volodymyr Makara, Ruslan Petrunya and Sergii Putselyk. Vacancy generation in silicon in the temperature range 100–633K under electron irradiation // Radiation Effects and Defects in Solids.- 2011.- V.166, № 6.- P.445–450.
  16. M. Kras’ko, A. Kraitchinskii, A. Kolosiuk, V. Neimash, V. Voitovych, V. Makara, R. Petrunya and V. Povarchuk. Accumulation of VO Defects in n-Si at High-temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity // Solid State Phenomena.- 2011.- V.178-179.- P.404-409.
  17. А.М. Крайчинський, М.М. Красько, А.Г. Колосюк, Р.В. Петруня, В.Ю. Поварчук, В.В Войтович, В.Б. Неймаш, В.А. Макара, Р.М. Руденко. Mеханізм відпалу VO дефектів в n-Si при високотемпературному імпульсному електронному опроміненні // УФЖ.- 2011.- Т.56, № 9.- С.926–932.
  18. Войтович В.В., Неймаш В.Б., Красько Н.Н., Колосюк А.Г., Поварчук В.Ю., Руденко Р.М., Макара В.А., Петруня Р.В., Юхимчук В.О., Стрельчук В.В. Влияние примеси Sn на оптические и структурные свойства тонких кремниевых пленок // ФТП.- 2011.-Т. 45, В. 10.- С. 1331-1335.

 

 
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