PostHeaderIcon Колосюк А.Г. - Резюме

 

Andriy Kolosiuk

46 Nauky Prospect, Kyiv, 03028, Ukraine


Phone: +38 044 525-3973
fax: +38 044 525-1589
e-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

Position:

Junior staff scientist

Department of Physics of Radiation Processes

Institute of Physics of National Academy of Sciences of Ukraine (NASU),

Kyiv, Ukraine.

Academic status

2006:
Candidate of science in Physics and Mathematics, Institute of Physics, Kyiv, Ukraine.
Thesis's title: "Peculiarities of Radiation Defect Formation in Silicon Single Crystals under Electron Irradiation at High-Temperature". 


Education

2004-2007: 

Postgraduate student (department of physics of radiating processes), Institute of Physics of National Academy of Sciences of Ukraine, Kyiv, Ukraine.

Diploma of candidate of phys.-mat. sciences. 

1999-2004: 

Studied at Taras Shevchenko National University of Kyiv, Ukraine.

Diploma of the physics. 


Employment

2007 – Present:  
Junior staff scientist, Institute of Physics of NASU, Kyiv, Ukraine.

2004 - 2007:  
Engineer, Institute of Physics of NASU, Kyiv, Ukraine. 

Work experience

Experimental investigation of radiation effects and defects in semiconductors (generally, in silicon):

  • Influence irradiation temperature on parameters of crystal silicon:  
    • structural perfection of silicon,
    • electric parameters,
    • introduction of thermal defects,
    • introduction of radiating defects.

Main publications

  1. Investigations by Capacitance Methods of n-Si Irradiated by Electrons at 450 °C
    Neimash V.B., Kras'ko M.M., Kraitchinskii A.M., Kolosyuk A.G., Voitovych V.V., Simoen E., Rafi J.-M., Claeys C., Versluys J., Clauws P.,
    Ukrainian Journal of Physics 2004, Vol.49, N 8 p.779-784 Abstract Full text (244 Kb)

  2. On the Nature of "Negative" Annealing of the Nonequilibrium Charge Carrier Lifetime in Irradiated n-Si
    Kras'ko M.M., Kraitchinskii A.M., Neimash V.B., Kolosyuk A.G., Shpinar L.I.,
    Ukrainian Journal of Physics 2007, Vol.52, N 2 p.162-166 Abstract Full text (835 Kb)
  3. Temperature Influence on the Formation of Defects in n-Si Irradiated with Electrons
    Kolosyuk A.G., Kraitchinskii A.M., Kras'ko M.M., Neimash V.B., Voitovich V.V., Povarchuk V.Yu., Kabaldin O.M.,
    Ukrainian Journal of Physics 2007, Vol.52, N 7 p.684-688 Abstract Full text (649 Kb)

  4. Temperature Dependence of the Efficiency of Vacancy Generation in n-Si at the 1-MeV Electron Irradiation
    Kolosyuk A.G., Kraitchinskii A.M., Kras'ko M.M., Neimash V.B., Rogutskii I.S.,
    Ukrainian Journal of Physics 2007, Vol.52, N 9 p.868-871 Abstract Full text (660 Kb)
  5. Influence of A- and E-centers on the Lifetime of Nonequilibrium Charge Carriers in γ-irradiated n-Si
    Kras'ko M.M., Neimash V.B., Kraitchinskii A.M., Kolosyuk A.G., Kabaldin O.M.,
    Ukrainian Journal of Physics 2008, Vol.53, N 7 p.683-687 Abstract Full text (726 Kb)

 

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